STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 4-Pin
- RS 제품 번호:
- 215-070
- 제조사 부품 번호:
- SCT020W120G3-4AG
- 제조업체:
- STMicroelectronics
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Subtotal (1 unit)*
₩106,287.68
재고있음
- 추가로 2025년 12월 29일 부터 30 개 단위 배송
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수량 | 한팩당 |
|---|---|
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-070
- 제조사 부품 번호:
- SCT020W120G3-4AG
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 541W | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 541W | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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