STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 4-Pin
- RS 제품 번호:
- 215-070
- 제조사 부품 번호:
- SCT020W120G3-4AG
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩110,253.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩110,253.00 |
| 10 + | ₩99,216.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-070
- 제조사 부품 번호:
- SCT020W120G3-4AG
- 제조업체:
- STMicroelectronics
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 541W | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 541W | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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