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STMicroelectronics MDmesh II N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

RS 제품 번호:: 151-952P
제조사 부품 번호:: STD13NM60N
제조업체:: STMicroelectronics

STMicroelectronics MDmesh II N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

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Subtotal 50 units (supplied on a continuous strip)*

₩288,200.00

마지막 RS 재고

최종적인 2,245 개 unit(s)이 배송 준비 됨

수량	한팩당
50 - 95	₩5,764.00
100 - 495	₩5,336.00
500 - 995	₩4,916.00
1000 +	₩4,724.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 151-952P
제조사 부품 번호:: STD13NM60N
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	MDmesh II
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.36Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	27nC
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	150°C
	Height	2.4mm
	Length	10.1mm
	Width	6.6mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series MDmesh II
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.36Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 27nC
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 150°C
	Height 2.4mm
	Length 10.1mm
	Width 6.6mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - STD13NM60N

COO (Country of Origin):: CN

The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

STMicroelectronics MDmesh II N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

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