Infineon, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 IGBTs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩199,938.00

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보
수량
한팩당
Per Tube*
30 - 30₩6,664.60₩199,954.92
60 - 90₩6,519.84₩195,612.12
120 +₩6,375.08₩191,252.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
911-4785
제조사 부품 번호:
IGW40T120FKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

270W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

48ns

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free, RoHS, JEDEC1

Series

TrenchStop

Automotive Standard

No

COO (Country of Origin):
DE

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

관련된 링크들