Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole
- RS 제품 번호:
- 879-3479
- 제조사 부품 번호:
- IRGPS46160DPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩20,548.40
마지막 RS 재고
- 최종적인 3 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 6 | ₩20,548.40 |
| 7 - 12 | ₩20,040.80 |
| 13 + | ₩19,721.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 879-3479
- 제조사 부품 번호:
- IRGPS46160DPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 240 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 750 W | |
| Package Type | Super-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 8 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16 x 5.5 x 20.8mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 500mJ | |
| Minimum Operating Temperature | -55 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 240 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 750 W | ||
Package Type Super-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 8 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16 x 5.5 x 20.8mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 500mJ | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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