STMicroelectronics STGWT30H60DFB, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole
- RS 제품 번호:
- 860-7325
- 제조사 부품 번호:
- STGWT30H60DFB
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩8,892.40
제한된 재고
- 8 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 6 | ₩4,446.20 | ₩8,892.40 |
| 8 - 14 | ₩4,333.40 | ₩8,666.80 |
| 16 + | ₩4,267.60 | ₩8,535.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 860-7325
- 제조사 부품 번호:
- STGWT30H60DFB
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | HB | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series HB | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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