onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 842-7898
- 제조사 부품 번호:
- NGTB35N65FL2WG
- 제조업체:
- onsemi
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단가 개당가격(2개가 1팩안에)
₩6,202.74
| 수량 | 한팩당 | 한팩당* |
| 2 - 6 | ₩6,202.74 | ₩12,403.756 |
| 8 - 14 | ₩6,047.499 | ₩12,094.999 |
| 16 + | ₩5,952.63 | ₩11,905.26 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 842-7898
- 제조사 부품 번호:
- NGTB35N65FL2WG
- 제조업체:
- onsemi
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제품 세부 사항
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 70 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 300 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.08mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |