IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 IGBTs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩41,585.60

Add to Basket
수량 선택 또는 입력
마지막 RS 재고
  • 최종적인 9 개 unit(s)이 배송 준비 됨
수량
한팩당
1 - 6₩41,585.60
7 - 12₩40,551.60
13 +₩39,931.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
808-0293
제조사 부품 번호:
IXYK100N120C3
제조업체:
IXYS
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

IXYS

Maximum Continuous Collector Current

188 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.15 kW

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

50kHz

Transistor Configuration

Single

Dimensions

20.29 x 5.31 x 26.59mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

관련된 링크들