IXYS IXA12IF1200HB, Type N-Channel IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 808-0256
- Distrelec 제품 번호:
- 304-45-327
- 제조사 부품 번호:
- IXA12IF1200HB
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩18,273.60
마지막 RS 재고
- 4 개 단위 배송 준비 완료
- 2026년 3월 02일 부터 최종 8 개 단위 배송
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 6 | ₩9,136.80 | ₩18,273.60 |
| 8 - 14 | ₩8,911.20 | ₩17,822.40 |
| 16 + | ₩8,638.60 | ₩17,277.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 808-0256
- Distrelec 제품 번호:
- 304-45-327
- 제조사 부품 번호:
- IXA12IF1200HB
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 85W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 125°C | |
| Series | Planar | |
| Standards/Approvals | IEC 60747, RoHS, Epoxy meets UL 94V-0 | |
| Length | 20.3mm | |
| Height | 5.3mm | |
| Width | 16.24 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 85W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 125°C | ||
Series Planar | ||
Standards/Approvals IEC 60747, RoHS, Epoxy meets UL 94V-0 | ||
Length 20.3mm | ||
Height 5.3mm | ||
Width 16.24 mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole
- IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount
- IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- IXYS IXYH40N120C3 IGBT, 70 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole