- RS 제품 번호:
- 808-0212
- 제조사 부품 번호:
- IXA27IF1200HJ
- 제조업체:
- IXYS
본 제품은 백오더/선주문 진행으로는 불가한 상황입니다.
죄송합니다만, 본 제품에 대한 재고가 없으며, 현재는 백오더/선주문 진행이 불가합니다.
추가완료!
단가 개당
₩15,144.622
수량 | 한팩당 |
1 + | ₩15,144.622 |
- RS 제품 번호:
- 808-0212
- 제조사 부품 번호:
- IXA27IF1200HJ
- 제조업체:
- IXYS
제정법과 컴플라이언스
제품 세부 사항
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 43 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 150 W |
Package Type | ISOPLUS247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.34mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |