onsemi HGT1S10N120BNST, Type N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 807-6660
- 제조사 부품 번호:
- HGT1S10N120BNST
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩12,464.40
일시적 품절
- 2026년 3월 12일 부터 480 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 198 | ₩6,232.20 | ₩12,464.40 |
| 200 - 398 | ₩6,081.80 | ₩12,163.60 |
| 400 + | ₩5,987.80 | ₩11,975.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 807-6660
- 제조사 부품 번호:
- HGT1S10N120BNST
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 35A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 298W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.45V | |
| Maximum Operating Temperature | 150°C | |
| Series | NPT | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 35A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 298W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.45V | ||
Maximum Operating Temperature 150°C | ||
Series NPT | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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