IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B
- RS 제품 번호 804-7616
- 제조사 부품 번호 IXDN55N120D1
- 제조업체 IXYS
제품 세부 사항
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
| 속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 450 W |
| Package Type | SOT-227B |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Length | 38.2mm |
| Width | 25.07mm |
| Height | 9.6mm |
| Dimensions | 38.2 x 25.07 x 9.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
일시 품절-다음 입고 날짜는 22/09/2020 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
단가 Each
₩
34,193.00
(exc. VAT)
수량
한(1)개당
1 - 1
₩34,193.00
2 - 4
₩33,521.85
5 - 9
₩32,863.10
10 - 29
₩32,219.85
30 +
₩31,587.45
