STMicroelectronics, Type N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP, Clamp
- RS 제품 번호:
- 686-8348P
- 제조사 부품 번호:
- STGE200NB60S
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal 3 units (supplied in a tube)*
₩150,871.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 3 + | ₩50,290.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 686-8348P
- 제조사 부품 번호:
- STGE200NB60S
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 600W | |
| Package Type | ISOTOP | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 12.2mm | |
| Standards/Approvals | ECOPACK, JESD97 | |
| Length | 38.2mm | |
| Series | Powermesh | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 600W | ||
Package Type ISOTOP | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 12.2mm | ||
Standards/Approvals ECOPACK, JESD97 | ||
Length 38.2mm | ||
Series Powermesh | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.