제조사부품번호

Infineon AIKW50N65RF5XKSA1, Type N-Channel IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 228-6510
제조사 부품 번호:: AIKW50N65RF5XKSA1
제조업체:: Infineon

Infineon AIKW50N65RF5XKSA1, Type N-Channel IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩15,453.60

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당
1 - 9	₩15,453.60
10 - 99	₩15,077.60
100 - 249	₩14,701.60
250 - 499	₩14,325.60
500 +	₩13,968.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-6510
제조사 부품 번호:: AIKW50N65RF5XKSA1
제조업체:: Infineon

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	IGBT Single Transistor IC
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	250W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±2 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101/100
	Height	5.3mm
	Length	41.9mm
	Width	16.3 mm
	Series	TrenchStop
	Automotive Standard	AEC-Q100, AEC-Q101

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type IGBT Single Transistor IC
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 250W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±2 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101/100
	Height 5.3mm
	Length 41.9mm
	Width 16.3 mm
	Series TrenchStop
	Automotive Standard AEC-Q100, AEC-Q101

Datasheet-AIKW50N65RF5XKSA1

The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.

Trenchstop 5 fast switching IGBT

Best in class efficiency in hard switching and resonant topologies

Low gate charge QG

Maximum junction temperature 175°C

Infineon AIKW50N65RF5XKSA1, Type N-Channel IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole

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