Infineon IKFW40N60DH3EXKSA1, Type N-Channel IGBT Single Transistor IC, 34 A 600 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 215-6659
- 제조사 부품 번호:
- IKFW40N60DH3EXKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩14,889.60
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩7,444.80 | ₩14,889.60 |
| 10 - 98 | ₩7,313.20 | ₩14,626.40 |
| 100 - 248 | ₩7,172.20 | ₩14,344.40 |
| 250 - 498 | ₩7,050.00 | ₩14,100.00 |
| 500 + | ₩6,927.80 | ₩13,855.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-6659
- 제조사 부품 번호:
- IKFW40N60DH3EXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 34A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 111W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 34A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 111W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon high speed switching series insulated-gate bipolar transistor fast and soft antiparallel diode in fully isolated package.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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