Infineon IKB15N65EH5ATMA1, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 215-6648
- 제조사 부품 번호:
- IKB15N65EH5ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩20,868.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩4,173.60 | ₩20,868.00 |
| 10 - 95 | ₩4,068.32 | ₩20,341.60 |
| 100 - 245 | ₩3,966.80 | ₩19,834.00 |
| 250 - 495 | ₩3,872.80 | ₩19,364.00 |
| 500 + | ₩3,771.28 | ₩18,856.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-6648
- 제조사 부품 번호:
- IKB15N65EH5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
관련된 링크들
- Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3
- Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
- Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3
- Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3
- Infineon IKB20N60H3ATMA1 IGBT, 40 A 600 V, 3-Pin PG-TO263-3, Through Hole
- Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263
- Infineon IKB20N60TATMA1 IGBT, 41 A 600 V, 3-Pin PG-TO263-3, Through Hole
- Infineon IGB15N65S5ATMA1 IGBT PG-TO263-3