Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
- RS 제품 번호:
- 168-7766
- 제조사 부품 번호:
- GT30J121
- 제조업체:
- Toshiba
150 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(50개가 1튜브안에)
₩6,150.993
| 수량 | 한팩당 | Per Tube* |
| 50 - 50 | ₩6,150.993 | ₩307,541.046 |
| 100 - 150 | ₩5,966.429 | ₩298,312.831 |
| 200 + | ₩5,787.04 | ₩289,360.60 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 168-7766
- 제조사 부품 번호:
- GT30J121
- 제조업체:
- Toshiba
제정법과 컴플라이언스
- COO (Country of Origin):
- JP
제품 세부 사항
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 170 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.9 x 4.8 x 20mm |
| Maximum Operating Temperature | +150 °C |