Infineon, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

₩147,091.20

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  • 2026년 4월 23일 부터 210 개 단위 배송
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한팩당
Per Tube*
30 - 120₩4,903.04₩147,074.28
150 +₩4,412.36₩132,353.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
165-8131
제조사 부품 번호:
IKW25N120H3FKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

326W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, Pb-free lead plating, JEDEC

Series

TrenchStop

Automotive Standard

No

Energy Rating

4.3mJ

COO (Country of Origin):
MY

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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