Infineon IKQ75N120CT2XKSA1, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

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RS 제품 번호:
162-3285
제조사 부품 번호:
IKQ75N120CT2XKSA1
제조업체:
Infineon
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브랜드

Infineon

Maximum Continuous Collector Current Ic

150A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

938W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type P

Pin Count

3

Switching Speed

20kHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

TrenchStop

Automotive Standard

No

Energy Rating

10.8mJ

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

20% lower R th(jh) compared to TO-247 3 pin

Extended collector-emitter pin creepage of 4.25 mm

Extended clip creepage due to fully encapsulated front side of the package

Higher system power density – I c increase keeping the same system thermal performance

Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247

Higher reliability, extended lifetime of the device

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