제조사부품번호

Infineon, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 162-3285
제조사 부품 번호:: IKQ75N120CT2XKSA1
제조업체:: Infineon

Infineon, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩463,326.00

일시적 품절

2026년 8월 28일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩15,444.20	₩463,309.08
60 - 90	₩15,107.68	₩453,230.40
120 +	₩14,805.00	₩444,166.92

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 162-3285
제조사 부품 번호:: IKQ75N120CT2XKSA1
제조업체:: Infineon

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	150A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	938W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	3
	Switching Speed	20kHz
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	No
	Automotive Standard	No
	Energy Rating	10.8mJ

	모두 선택
	브랜드 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 150A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 938W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 3
	Switching Speed 20kHz
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals No
	Automotive Standard No
	Energy Rating 10.8mJ

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

20% lower R th(jh) compared to TO-247 3 pin

Extended collector-emitter pin creepage of 4.25 mm

Extended clip creepage due to fully encapsulated front side of the package

Higher system power density – I c increase keeping the same system thermal performance

Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247

Higher reliability, extended lifetime of the device

Infineon, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

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