IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
- RS 제품 번호:
- 146-1703
- 제조사 부품 번호:
- MIXA450PF1200TSF
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 Box of 3 units)*
₩1,020,631.32
마지막 RS 재고
- 최종적인 39 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Box* |
|---|---|---|
| 3 - 3 | ₩340,210.44 | ₩1,020,633.20 |
| 6 - 9 | ₩333,404.84 | ₩1,000,216.40 |
| 12 + | ₩326,738.36 | ₩980,213.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 146-1703
- 제조사 부품 번호:
- MIXA450PF1200TSF
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current | 650 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 2.1 kW | |
| Configuration | Dual | |
| Package Type | SimBus F | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 11 | |
| Transistor Configuration | Series | |
| Dimensions | 152 x 62 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current 650 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 2.1 kW | ||
Configuration Dual | ||
Package Type SimBus F | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 11 | ||
Transistor Configuration Series | ||
Dimensions 152 x 62 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- DE
IGBT Modules, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
- IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount
- IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole
- IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount
- IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- Mitsubishi Electric CM450DX -24T #300G Dual IGBT, 450 1200 V Module, PCB Mount
