- RS 제품 번호:
- 145-9637
- 제조사 부품 번호:
- FF300R12KS4HOSA1
- 제조업체:
- Infineon
일시 품절-다음 입고 날짜는 31/03/2026 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(10개가 1트레이안에)
₩259,745.791
수량 | 한팩당 | Per Tray* |
10 - 10 | ₩259,745.791 | ₩2,597,461.364 |
20 - 30 | ₩254,550.393 | ₩2,545,512.551 |
40 + | ₩249,460.213 | ₩2,494,602.127 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 145-9637
- 제조사 부품 번호:
- FF300R12KS4HOSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- HU
제품 세부 사항
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.