Infineon IKY50N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin
- RS 제품 번호:
- 285-025
- 제조사 부품 번호:
- IKY50N120CH7XKSA1
- 제조업체:
- Infineon
사용할 수 없음
RS는 더 이상 이 제품을 입고하지 않습니다.
- RS 제품 번호:
- 285-025
- 제조사 부품 번호:
- IKY50N120CH7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 398 W | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Package Type | PG-TO247-4-PLUS-NN5.1 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 398 W | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Package Type PG-TO247-4-PLUS-NN5.1 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
The Infineon IGBT is engineered for optimal performance in demanding applications. The robust design features advanced soft commutation capabilities, ensuring minimal switching losses and increased efficiency. This product excels in environments requiring quick recovery times, making it ideal for industrial applications. With its seamless integration of low Qrr diode characteristics, it delivers consistent and reliable power management. Its superior thermal performance and low saturation voltage at elevated temperatures ensure reliability for long term use. This device is perfect for applications such as UPS systems, electric vehicle charging, and string inverters, reflecting its versatility in the modern marketplace.
Best in class efficiency for hard switching
Low emitter rapid diode enhances performance
Pb free lead plating meets RoHS standards
Engineered for easy parallel connection
Qualified for industrial applications per JEDEC
Optimised for thermal management and compact design
Low emitter rapid diode enhances performance
Pb free lead plating meets RoHS standards
Engineered for easy parallel connection
Qualified for industrial applications per JEDEC
Optimised for thermal management and compact design
관련된 링크들
- Infineon IKY75N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin
- Infineon IKY140N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 232 A 1200 V, 4-Pin
- Infineon IKY50N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin
- Infineon IKY120N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin
- Infineon IKY150N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin
- Infineon IKZA50N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 82 A 1200 V, 4-Pin
- Infineon IKZA75N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin
- Infineon IKZA40N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 70 A 1200 V, 4-Pin
