Infineon IKWH50N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- RS 제품 번호:
- 285-013
- 제조사 부품 번호:
- IKWH50N65EH7XKSA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 285-013
- 제조사 부품 번호:
- IKWH50N65EH7XKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 249W | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | 40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 249W | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature 40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Length 20.1mm | ||
Automotive Standard No | ||
The Infineon IGBT is a sophisticated high speed IGBT designed to deliver impressive performance in demanding applications. Utilising Advanced trench stop technology, this 650V device offers significantly reduced switching losses and an ultra low collector emitter saturation voltage. Its robust design ensures exceptional reliability, making it an Ideal choice for energy efficient systems, such as industrial UPS and electric vehicle charging solutions. With excellent thermal management characteristics and a compliance with stringent JEDEC standards, this device stands out for its versatility and durability in various applications.
Low switching losses improve efficiency
Humidity robustness for reliable operation
Optimized for two and three level topologies
Soft and fast recovery diode enhances performance
Validated to industrial standards for reliability
Comprehensive product spectrum and PSpice models
High collector current for demanding applications
관련된 링크들
- Infineon IKWH50N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 3-Pin PG-TO247-3-STD-NN4.8,
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- Infineon IKWH40N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 3-Pin PG-TO247-3-STD-NN4.8,
- Infineon IKWH100N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 140 A 650 V, 3-Pin
- Infineon IKZA50N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,
- Infineon IKZA75N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,
- Infineon IKZA40N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,
- Infineon IKY120N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin
