Infineon IKWH50N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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₩16,672.50

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  • 2026년 9월 07일 부터 배송
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포장 옵션
RS 제품 번호:
285-013
제조사 부품 번호:
IKWH50N65EH7XKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

249W

Package Type

PG-TO-247-3-STD-NN4.8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

40°C

Maximum Operating Temperature

175°C

Length

20.1mm

Height

5.1mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon IGBT is a sophisticated high speed IGBT designed to deliver impressive performance in demanding applications. Utilising Advanced trench stop technology, this 650V device offers significantly reduced switching losses and an ultra low collector emitter saturation voltage. Its robust design ensures exceptional reliability, making it an Ideal choice for energy efficient systems, such as industrial UPS and electric vehicle charging solutions. With excellent thermal management characteristics and a compliance with stringent JEDEC standards, this device stands out for its versatility and durability in various applications.

Low switching losses improve efficiency

Humidity robustness for reliable operation

Optimized for two and three level topologies

Soft and fast recovery diode enhances performance

Validated to industrial standards for reliability

Comprehensive product spectrum and PSpice models

High collector current for demanding applications

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