onsemi NCV57201DR2G, IGBT 2, 1.9 A 8-Pin 20 V, SOIC
- RS 제품 번호:
- 221-6668
- 제조사 부품 번호:
- NCV57201DR2G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩11,223.60
재고있음
- 2,470 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩2,244.72 | ₩11,223.60 |
| 10 - 95 | ₩2,203.36 | ₩11,016.80 |
| 100 - 245 | ₩2,162.00 | ₩10,810.00 |
| 250 - 495 | ₩2,124.40 | ₩10,622.00 |
| 500 + | ₩2,090.56 | ₩10,452.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6668
- 제조사 부품 번호:
- NCV57201DR2G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Length 5mm | ||
Width 4 mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Matched propagation delay 90 ns
Built−in 20 ns minimum pulse width filter
Non−inverting output signal
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V
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