Infineon 2ED2388S06FXUMA1, Isolated Gate Driver 1, 1 A 8-Pin 20 V, DSO-8
- RS 제품 번호:
- 349-170
- 제조사 부품 번호:
- 2ED2388S06FXUMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩15,773.20
재고있음
- 2,500 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 90 | ₩1,577.32 | ₩15,778.84 |
| 100 - 240 | ₩1,498.36 | ₩14,987.36 |
| 250 - 490 | ₩1,387.44 | ₩13,883.80 |
| 500 - 990 | ₩1,278.40 | ₩12,780.24 |
| 1000 + | ₩1,229.52 | ₩12,302.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-170
- 제조사 부품 번호:
- 2ED2388S06FXUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver IC | |
| Output Current | 1A | |
| Pin Count | 8 | |
| Fall Time | 70ns | |
| Package Type | DSO-8 | |
| Driver Type | Isolated Gate Driver | |
| Number of Outputs | 2 | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Series | 2ED2388S06F | |
| Length | 4.9mm | |
| Standards/Approvals | RoHS | |
| Width | 3.9 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver IC | ||
Output Current 1A | ||
Pin Count 8 | ||
Fall Time 70ns | ||
Package Type DSO-8 | ||
Driver Type Isolated Gate Driver | ||
Number of Outputs 2 | ||
Rise Time 70ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Series 2ED2388S06F | ||
Length 4.9mm | ||
Standards/Approvals RoHS | ||
Width 3.9 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Infineon 650 V Half bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, its offer excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra fast and low resistance bootstrap diode
90 ns propagation delay
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
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