Nexperia PBSS5330X,115 Transistor, -3 A PNP, -30 V, 4-Pin UPAK
- RS 제품 번호:
- 518-1946
- 제조사 부품 번호:
- PBSS5330X,115
- 제조업체:
- Nexperia
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 pack of 10 units)*
₩5,538.00
재고있음
- 750 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 + | ₩553.80 | ₩5,538.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 518-1946
- 제조사 부품 번호:
- PBSS5330X,115
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -3A | |
| Maximum Collector Emitter Voltage Vceo | -30V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 30V | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | PBSS5330X | |
| Length | 4.6mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -3A | ||
Maximum Collector Emitter Voltage Vceo -30V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 30V | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum Operating Temperature -65°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series PBSS5330X | ||
Length 4.6mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
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