Infineon BFR460L3E6327XTMA1 NPN RF Bipolar Transistor, 50 mA, 15 V, 3-Pin TSLP-3-1

The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.

High ESD performance
High gain with minimum noise figure

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