Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9
- RS 제품 번호:
- 258-0650
- 제조사 부품 번호:
- BFR840L3RHESDE6327XTSA1
- 제조업체:
- Infineon
모든 Bipolar Transistors 열람하기
15000 <재고있음> 5-9영업일내 홍콩 발송
단가 Each (In a Pack of 10)
₩901.25
| 수량 | 한팩당 | 한팩당* |
| 10 - 10 | ₩901.25 | ₩9,010.75 |
| 20 - 90 | ₩826.00 | ₩8,265.25 |
| 100 - 240 | ₩770.00 | ₩7,707.00 |
| 250 - 490 | ₩675.50 | ₩6,758.50 |
| 500 + | ₩626.50 | ₩6,273.75 |
| *다른 단위에 대한 가격 표시 | ||
포장 옵션
- RS 제품 번호:
- 258-0650
- 제조사 부품 번호:
- BFR840L3RHESDE6327XTSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
Low profile and small form factor leadless package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
| 속성 | 값 |
| Transistor Type | NPN |
| Maximum DC Collector Current | 35 mA |
| Maximum Collector Emitter Voltage | 2.25 V |
| Package Type | TSLP-3-9 |
| Mounting Type | Surface Mount |