Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9
- RS 제품 번호:
- 258-0650
- 제조사 부품 번호:
- BFR840L3RHESDE6327XTSA1
- 제조업체:
- Infineon
15000 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(10개가 1팩안에)
₩633.038
| 수량 | 한팩당 | 한팩당* |
| 10 - 10 | ₩633.038 | ₩6,325.208 |
| 20 - 90 | ₩579.566 | ₩5,800.839 |
| 100 - 240 | ₩541.619 | ₩5,409.286 |
| 250 - 490 | ₩474.348 | ₩4,743.475 |
| 500 + | ₩439.85 | ₩4,405.395 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 258-0650
- 제조사 부품 번호:
- BFR840L3RHESDE6327XTSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
Low profile and small form factor leadless package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 35 mA |
| Maximum Collector Emitter Voltage | 2.25 V |
| Package Type | TSLP-3-9 |
| Mounting Type | Surface Mount |