onsemi AFGHL50T65SQDC Bipolar Transistor, 100 A NPN, 650 V, 3-Pin TO-247
- RS 제품 번호:
- 195-2574
- 제조사 부품 번호:
- AFGHL50T65SQDC
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩33,988.50
제한된 재고
- 추가로 2026년 4월 27일 부터 26 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 6 | ₩16,994.25 | ₩33,988.50 |
| 8 - 14 | ₩16,565.25 | ₩33,130.50 |
| 16 + | ₩16,311.75 | ₩32,623.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2574
- 제조사 부품 번호:
- AFGHL50T65SQDC
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 100A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Power Dissipation Pd | 238W | |
| Minimum Operating Temperature | 175°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Series | AFGHL50T65SQDC | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 100A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Power Dissipation Pd 238W | ||
Minimum Operating Temperature 175°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Series AFGHL50T65SQDC | ||
Automotive Standard AEC-Q101 | ||
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Copacked with SiC schottky barrier diode
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching
관련된 링크들
- onsemi Bipolar Transistor, 100 A NPN, 650 V, 3-Pin TO-247
- onsemi AFGHL75T65SQDC, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- onsemi, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- onsemi 2N3904BU NPN Bipolar Transistor
- onsemi Transistor, 30 A NPN, 450 V, 3-Pin TO-247
- onsemi Transistor, 16 A NPN, 250 V, 3-Pin TO-247
- onsemi Digital Transistor, 230 V NPN Through Hole TO-247, 3-Pin
- onsemi MJW18020G Transistor, 30 A NPN, 450 V, 3-Pin TO-247