STMicroelectronics Bipolar Transistor, 16 A NPN, 700 V, 3-Pin TO-263
- RS 제품 번호:
- 188-8282
- 제조사 부품 번호:
- STB13007DT4
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩1,449,480.00
일시적 품절
- 2026년 7월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩1,449.48 | ₩1,449,480.00 |
| 2000 - 3000 | ₩1,406.24 | ₩1,405,864.00 |
| 4000 + | ₩1,363.00 | ₩1,363,752.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-8282
- 제조사 부품 번호:
- STB13007DT4
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 16A | |
| Maximum Collector Emitter Voltage Vceo | 700V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 9V | |
| Maximum Power Dissipation Pd | 80W | |
| Minimum DC Current Gain hFE | 25 | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 15.85mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Series | STB13007DT4 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 16A | ||
Maximum Collector Emitter Voltage Vceo 700V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 9V | ||
Maximum Power Dissipation Pd 80W | ||
Minimum DC Current Gain hFE 25 | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 15.85mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Series STB13007DT4 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
Fully characterized at 125 ˚C
Very high switching speed
Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
Integrated free-wheeling diode
High voltage capability
Minimum lot-to-lot spread for reliable operation
Large RBSOA
Low spread of dynamic parameters
Applications
Electronic transformers for halogen lamps
Switch mode power supplies
관련된 링크들
- STMicroelectronics STB13007DT4 Bipolar Transistor, 16 A NPN, 700 V, 3-Pin TO-263
- STMicroelectronics Bipolar Transistor, 30 A NPN, 350 V, 3-Pin TO-263
- STMicroelectronics Bipolar Transistor, 15 A NPN, 100 V, 3-Pin TO-263
- STMicroelectronics Bipolar Transistor, 20 A NPN, 80 V, 3-Pin TO-263
- STMicroelectronics BUB941ZTT4 Bipolar Transistor, 30 A NPN, 350 V, 3-Pin TO-263
- STMicroelectronics 2STBN15D100 Bipolar Transistor, 15 A NPN, 100 V, 3-Pin TO-263
- STMicroelectronics MJB44H11T4-A Bipolar Transistor, 20 A NPN, 80 V, 3-Pin TO-263
- STMicroelectronics Transistor, 8 A NPN, 700 V, 3-Pin TO-247