onsemi FDB38N30U Digital Transistor N-Channel Surface, 2-Pin

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩27,673.60

Add to Basket
수량 선택 또는 입력
재고있음
  • 135 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
한팩당*
5 - 195₩5,534.72₩27,673.60
200 - 395₩5,395.60₩26,978.00
400 +₩5,312.88₩26,564.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
186-8142
제조사 부품 번호:
FDB38N30U
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

Digital Transistor

Mount Type

Surface

Maximum Power Dissipation Pd

313W

Transistor Polarity

N-Channel

Maximum Operating Temperature

150°C

Pin Count

2

Height

4.58mm

Length

10.67mm

Width

9.65 mm

Series

UniFET Ultra FRFET MOSFET

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

RDS(on) = 120mΩ ( Max.)@ VGS = 10V, ID = 19A

Low gate charge ( Typ. 56nC)

Low Crss ( Typ. 55pF)

Applications

This product is general usage and suitable for many different applications.

관련된 링크들