N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC Infineon IRFP140NPBF

RS 제품 번호:: 919-4902
제조사 부품 번호:: IRFP140NPBF
제조업체:: Infineon

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC Infineon IRFP140NPBF

일시 품절-다음 입고 날짜는 30/04/2025 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.

추가완료!

단가 개당가격(25개가 1튜브안에)

₩2,680.495

수량	한팩당	Per Tube*
25 - 25	₩2,680.495	₩66,995.116
50 - 75	₩2,621.848	₩65,537.576
100 +	₩2,563.201	₩64,080.035
*다른 단위에 대한 가격 표시

RS 제품 번호:: 919-4902
제조사 부품 번호:: IRFP140NPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

COO (Country of Origin):: MX

제품 세부 사항

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

사양

속성	값
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	94 nC @ 10 V
Length	15.9mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	5.3mm
Height	20.3mm
Minimum Operating Temperature	-55 °C