N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB Infineon IRF520NPBF
- RS 제품 번호:
- 919-4876
- 제조사 부품 번호:
- IRF520NPBF
- 제조업체:
- Infineon
150 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(50개가 1튜브안에)
₩829.677
| 수량 | 한팩당 | Per Tube* |
| 50 - 50 | ₩829.677 | ₩41,457.972 |
| 100 - 150 | ₩810.703 | ₩40,561.024 |
| 200 + | ₩793.454 | ₩39,655.451 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 919-4876
- 제조사 부품 번호:
- IRF520NPBF
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.7 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 200 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 48 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.69mm |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Length | 10.54mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
| Height | 8.77mm |