- RS 제품 번호:
- 913-3869
- 제조사 부품 번호:
- IRL2505PBF
- 제조업체:
- Infineon
600 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(50개가 1튜브안에)
₩2,357.938
수량 | 한팩당 | Per Tube* |
50 - 50 | ₩2,357.938 | ₩117,905.54 |
100 - 150 | ₩2,306.191 | ₩115,335.439 |
200 + | ₩2,256.169 | ₩112,773.962 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 913-3869
- 제조사 부품 번호:
- IRL2505PBF
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 104 A |
Maximum Drain Source Voltage | 55 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 130 nC @ 5 V |
Transistor Material | Si |
Height | 8.77mm |
Minimum Operating Temperature | -55 °C |
Series | LogicFET |