- RS 제품 번호:
- 904-7345
- 제조사 부품 번호:
- C2M1000170D
- 제조업체:
- Wolfspeed
45 <재고있음> 5-9영업일내 홍콩 발송
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단가 개당
₩14,813.441
수량 | 한팩당 |
1 - 7 | ₩14,813.441 |
8 - 14 | ₩14,442.588 |
15 + | ₩14,218.351 |
- RS 제품 번호:
- 904-7345
- 제조사 부품 번호:
- C2M1000170D
- 제조업체:
- Wolfspeed
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 5 A |
Maximum Drain Source Voltage | 1700 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.4 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.1V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 69 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -5 V, +20 V |
Maximum Operating Temperature | +150 °C |
Length | 16.13mm |
Typical Gate Charge @ Vgs | 13 nC @ 20 V, 13 nC @ 5 V |
Number of Elements per Chip | 1 |
Width | 5.21mm |
Transistor Material | SiC |
Height | 21.1mm |
Forward Diode Voltage | 3.8V |
Minimum Operating Temperature | -55 °C |