- RS 제품 번호:
- 826-9092
- 제조사 부품 번호:
- IPB120P04P4L03ATMA1
- 제조업체:
- Infineon
현재 시스템 에러로 재고 수량 확인이 불가합니다. krenquiry@rs-components.com 에 문의하시거나 잠시후에 다시 시도해주시기 바랍니다.
추가완료!
단가 개당가격(10개가 1팩안에)
₩4,243.254
수량 | 한팩당 | 한팩당* |
10 - 240 | ₩4,243.254 | ₩42,425.64 |
250 - 490 | ₩4,136.31 | ₩41,364.827 |
500 + | ₩4,072.489 | ₩40,730.064 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 826-9092
- 제조사 부품 번호:
- IPB120P04P4L03ATMA1
- 제조업체:
- Infineon
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제외
제품 세부 사항
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 40 V |
Package Type | D2PAK (TO-263) |
Series | OptiMOS P |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 5.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 136 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Length | 10mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Width | 9.25mm |
Height | 4.4mm |
Minimum Operating Temperature | -55 °C |