- RS 제품 번호:
- 825-9130
- 제조사 부품 번호:
- BSZ086P03NS3GATMA1
- 제조업체:
- Infineon
10540 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(20개가 1팩안에)
₩1,281.601
수량 | 한팩당 | 한팩당* |
20 + | ₩1,281.601 | ₩25,628.564 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 825-9130
- 제조사 부품 번호:
- BSZ086P03NS3GATMA1
- 제조업체:
- Infineon
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제품 세부 사항
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Voltage | 30 V |
Package Type | TSDSON |
Series | OptiMOS P |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 13.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.9V |
Minimum Gate Threshold Voltage | 3.1V |
Maximum Power Dissipation | 69 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -25 V, +25 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 43.2 nC @ 10 V |
Length | 3.4mm |
Maximum Operating Temperature | +150 °C |
Width | 3.4mm |
Transistor Material | Si |
Height | 1.1mm |
Minimum Operating Temperature | -55 °C |