N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

RS 제품 번호:: 650-4277P
제조사 부품 번호:: IRFB4227PBF
제조업체:: Infineon

N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

일시 품절-다음 입고 날짜는 16/05/2024 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.

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단가 개당(튜브에 담겨 공급됨)

₩4,115.611

수량	한팩당
13 - 24	₩4,115.611
25 +	₩4,041.441

RS 제품 번호:: 650-4277P
제조사 부품 번호:: IRFB4227PBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

사양

속성	값
Channel Type	N
Maximum Continuous Drain Current	65 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.82mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Length	10.66mm
Typical Gate Charge @ Vgs	70 nC @ 10 V
Height	9.02mm
Minimum Operating Temperature	-40 °C