- RS 제품 번호:
- 248-5819
- 제조사 부품 번호:
- NTHL060N065SC1
- 제조업체:
- onsemi
630 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(30개가 1튜브안에)
₩11,030.736
수량 | 한팩당 | Per Tube* |
30 - 30 | ₩11,030.736 | ₩330,942.764 |
60 - 60 | ₩10,480.492 | ₩314,399.248 |
90 + | ₩9,956.123 | ₩298,673.335 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 248-5819
- 제조사 부품 번호:
- NTHL060N065SC1
- 제조업체:
- onsemi
제정법과 컴플라이언스
제품 세부 사항
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-3L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra low gate charge 74 nC
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 47 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |