N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK onsemi NTBG080N120SC1
- RS 제품 번호:
- 205-2450
- 제조사 부품 번호:
- NTBG080N120SC1
- 제조업체:
- onsemi
760 <재고있음> 5-9영업일내 홍콩 발송
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단가 개당
₩15,180.845
| 수량 | 한팩당 |
| 1 - 199 | ₩15,180.845 |
| 200 - 399 | ₩14,803.092 |
| 400 + | ₩14,573.68 |
- RS 제품 번호:
- 205-2450
- 제조사 부품 번호:
- NTBG080N120SC1
- 제조업체:
- onsemi
제정법과 컴플라이언스
제품 세부 사항
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
High Junction temperature
Ultra low gate charge
Low effective output capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |