- RS 제품 번호:
- 178-3932P
- 제조사 부품 번호:
- SiZ348DT-T1-GE3
- 제조업체:
- Vishay Siliconix
3880 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당(릴로 공급됨) 150pcs 이하는 STRIP 포장
₩1,021.141
수량 | 한팩당 |
750 - 1490 | ₩1,021.141 |
1500 + | ₩1,005.617 |
- RS 제품 번호:
- 178-3932P
- 제조사 부품 번호:
- SiZ348DT-T1-GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
제품 세부 사항
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAIR 3 x 3 |
Series | TrenchFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 16.7 W |
Maximum Gate Source Voltage | -16 V, +20 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 3mm |
Width | 3mm |
Number of Elements per Chip | 2 |
Typical Gate Charge @ Vgs | 12.1 nC @ 10 V |
Forward Diode Voltage | 1.2V |
Height | 0.75mm |
Minimum Operating Temperature | -55 °C |