- RS 제품 번호:
- 178-3708
- 제조사 부품 번호:
- SQ2364EES-T1_GE3
- 제조업체:
- Vishay Siliconix
- RS 제품 번호:
- 178-3708
- 제조사 부품 번호:
- SQ2364EES-T1_GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
- COO (Country of Origin):
- CN
제품 세부 사항
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 600 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 0.46V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 3 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±8 V |
Number of Elements per Chip | 1 |
Width | 1.4mm |
Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
Length | 3.04mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Automotive Standard | AEC-Q101 |
Minimum Operating Temperature | -55 °C |
Series | TrenchFET |
Forward Diode Voltage | 1.2V |
Height | 1.02mm |