- RS 제품 번호:
- 178-3703
- 제조사 부품 번호:
- SiZ350DT-T1-GE3
- 제조업체:
- Vishay Siliconix
- RS 제품 번호:
- 178-3703
- 제조사 부품 번호:
- SiZ350DT-T1-GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
제품 세부 사항
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAIR 3 x 3 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 16.7 W |
Maximum Gate Source Voltage | -12 V, +16 V |
Number of Elements per Chip | 2 |
Width | 3mm |
Typical Gate Charge @ Vgs | 13.5 nC @ 10 V |
Length | 3mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Height | 0.75mm |
Forward Diode Voltage | 1.2V |
Series | TrenchFET |