- RS 제품 번호:
- 178-3687
- 제조사 부품 번호:
- SiR188DP-T1-RE3
- 제조업체:
- Vishay Siliconix
6000 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(3000개가 1릴안에)
₩922.822
수량 | 한팩당 | Per Reel* |
3000 - 12000 | ₩922.822 | ₩2,768,981.97 |
15000 + | ₩903.848 | ₩2,713,612.68 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 178-3687
- 제조사 부품 번호:
- SiR188DP-T1-RE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
- COO (Country of Origin):
- CN
제품 세부 사항
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 60 V |
Series | TrenchFET |
Package Type | PowerPAK SO-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 3.6V |
Maximum Power Dissipation | 65.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Width | 5mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 29 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Length | 5.99mm |
Forward Diode Voltage | 1.1V |
Minimum Operating Temperature | -55 °C |
Height | 1.07mm |