- RS 제품 번호:
- 178-3663
- 제조사 부품 번호:
- Si2319DDS-T1-GE3
- 제조업체:
- Vishay Siliconix
- RS 제품 번호:
- 178-3663
- 제조사 부품 번호:
- Si2319DDS-T1-GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
- COO (Country of Origin):
- CN
제품 세부 사항
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery switch
• Load switch
• Motor drive control
• Load switch
• Motor drive control
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 3.6 A |
Maximum Drain Source Voltage | 40 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 100 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Typical Gate Charge @ Vgs | 12.5 nC @ 10 V |
Width | 1.4mm |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 3.04mm |
Minimum Operating Temperature | -55 °C |
Series | TrenchFET |
Height | 1.02mm |
Forward Diode Voltage | 1.2V |