N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2
- RS 제품 번호:
- 166-0942
- 제조사 부품 번호:
- STB18N60DM2
- 제조업체:
- STMicroelectronics
일시 품절-다음 입고 날짜는 15/05/2025 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(1000개가 1릴안에)
₩2,207.872
| 수량 | 한팩당 | Per Reel* |
| 1000 - 4000 | ₩2,207.872 | ₩2,207,872.00 |
| 5000 + | ₩2,163.025 | ₩2,163,714.56 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 166-0942
- 제조사 부품 번호:
- STB18N60DM2
- 제조업체:
- STMicroelectronics
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
사양
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Series | MDmesh DM2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 290 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 90 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Length | 9.35mm |
| Transistor Material | Si |
| Width | 10.4mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 4.6mm |
| Forward Diode Voltage | 1.6V |