SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

RS 제품 번호:: 162-9714
제조사 부품 번호:: C3M0280090D
제조업체:: Wolfspeed

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

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660 <재고있음> 5-9영업일내 홍콩 발송

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₩6,399.379

수량	한팩당	Per Tube*
30 - 30	₩6,399.379	₩191,971.021
60 - 90	₩6,206.19	₩186,206.405
120 +	₩6,019.901	₩180,622.904
*다른 단위에 대한 가격 표시

RS 제품 번호:: 162-9714
제조사 부품 번호:: C3M0280090D
제조업체:: Wolfspeed

참조 문서

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COO (Country of Origin):: CN

제품 세부 사항

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

사양

속성	값
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Number of Elements per Chip	1
Width	21.1mm
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Length	16.13mm
Height	5.21mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	4.8V