- RS 제품 번호:
- 145-5453
- 제조사 부품 번호:
- FQPF9P25
- 제조업체:
- onsemi
1100 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(50개가 1튜브안에)
₩2,018.133
수량 | 한팩당 | Per Tube* |
50 - 50 | ₩2,018.133 | ₩100,941.148 |
100 - 150 | ₩1,975.011 | ₩98,741.901 |
200 + | ₩1,931.888 | ₩96,551.278 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 145-5453
- 제조사 부품 번호:
- FQPF9P25
- 제조업체:
- onsemi
제정법과 컴플라이언스
제품 세부 사항
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
사양
속성 | 값 |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 3.9 A |
Maximum Drain Source Voltage | 250 V |
Package Type | TO-220F |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 620 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 50 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Width | 4.9mm |
Transistor Material | Si |
Length | 10.36mm |
Typical Gate Charge @ Vgs | 29 nC @ 10 V |
Height | 16.07mm |
Minimum Operating Temperature | -55 °C |
Series | QFET |