P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1
- RS 제품 번호:
- 124-9058
- 제조사 부품 번호:
- IPP80P03P4L04AKSA1
- 제조업체:
- Infineon
350 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(50개가 1튜브안에)
₩3,408.402
| 수량 | 한팩당 | Per Tube* |
| 50 - 50 | ₩3,408.402 | ₩170,454.618 |
| 100 - 150 | ₩3,334.232 | ₩166,746.083 |
| 200 + | ₩3,260.061 | ₩163,037.548 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 124-9058
- 제조사 부품 번호:
- IPP80P03P4L04AKSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- MY
제품 세부 사항
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TO-220 |
| Series | OptiMOS P |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 137 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +5 V |
| Number of Elements per Chip | 1 |
| Width | 4.4mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10mm |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V |
| Height | 15.65mm |
| Minimum Operating Temperature | -55 °C |