P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon IPB120P04P4L03ATMA1
- RS 제품 번호:
- 124-8751
- 제조사 부품 번호:
- IPB120P04P4L03ATMA1
- 제조업체:
- Infineon
일시 품절-다음 입고 날짜는 20/05/2025 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(1000개가 1릴안에)
₩2,616.673
| 수량 | 한팩당 | Per Reel* |
| 1000 - 1000 | ₩2,616.673 | ₩2,616,500.81 |
| 2000 - 3000 | ₩2,564.926 | ₩2,564,236.34 |
| 4000 + | ₩2,513.179 | ₩2,513,006.81 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 124-8751
- 제조사 부품 번호:
- IPB120P04P4L03ATMA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제외
- COO (Country of Origin):
- CN
제품 세부 사항
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | D2PAK (TO-263) |
| Series | OptiMOS P |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Width | 9.25mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10mm |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Height | 4.4mm |
| Minimum Operating Temperature | -55 °C |