N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 Infineon BSS606NH6327XTSA1

  • RS 제품 번호 110-7170
  • 제조사 부품 번호 BSS606NH6327XTSA1
  • 제조업체 Infineon
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Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Channel Type N
Maximum Continuous Drain Current 3.2 A
Maximum Drain Source Voltage 60 V
Package Type PG-SOT-89
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 90 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.3V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Forward Diode Voltage 1.1V
Minimum Operating Temperature -55 °C
Series OptiMOS 3
Maximum Operating Temperature +150 °C
Length 4.5mm
Typical Gate Charge @ Vgs 3.7 nC @ 5 V
Height 1.5mm
Width 2.5mm
Transistor Material Si
1750 <재고있음> 5-9영업일내 홍콩 발송
단가 Each (In a Pack of 50)
Was ₩575.05
(exc. VAT)
50 - 50
100 - 450
500 - 950
1000 - 2450
2500 +
*다른 단위에 대한 가격 표시
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