- RS 제품 번호:
- 110-7170
- 제조사 부품 번호:
- BSS606NH6327XTSA1
- 제조업체:
- Infineon
일시 품절-다음 입고 날짜는 03/05/2024 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(50개가 1팩안에)
₩557.143
수량 | 한팩당 | 한팩당* |
50 - 200 | ₩557.143 | ₩27,857.135 |
250 - 450 | ₩543.344 | ₩27,158.551 |
500 + | ₩534.719 | ₩26,744.575 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 110-7170
- 제조사 부품 번호:
- BSS606NH6327XTSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.2 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-89 |
Series | OptiMOS 3 |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 90 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.3V |
Minimum Gate Threshold Voltage | 1.3V |
Maximum Power Dissipation | 1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
Width | 2.5mm |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Length | 4.5mm |
Maximum Operating Temperature | +150 °C |
Height | 1.5mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.1V |